Hostname: page-component-84b7d79bbc-2l2gl Total loading time: 0 Render date: 2024-07-26T03:01:27.808Z Has data issue: false hasContentIssue false
  • English
  • Français

Etching Process of Al Oxide on Si Surface with HF Treatment

Published online by Cambridge University Press:  10 February 2011

T. Hoshino  and
Y. Nishioka
T. Hoshino
Affiliation:
Faculty of Pharmaceutical Sci., Chiba University, 3–4–1 Yayoi-cho, Inage, Chiba 263, Japan Texas Instruments Tsukuba R&D Center Limited, 17 Miyukigaoka, Tsukuba 305, Japan
Y. Nishioka
Affiliation:
Texas Instruments Tsukuba R&D Center Limited, 17 Miyukigaoka, Tsukuba 305, Japan
Get access

Abstract

ab initio theoretical calculations have been performed to reveal the etching mechanism of HF with Al metal oxide on Si surfaces. The following sequential process has been revealed to be the most probable reaction path. HF + AlO-Si surface → HO-Si surface + AlF (1), HF + HO-Si surface → F-Si surface + H2O (1'). Both of the reactions have potential energy barriers of 0.8∼1.0eV, and are exothermic by 0.3 and l. leV, respectively. Another reaction path that proceeds with one-step process, HF + AlO-Si surface → F-Si surface + AlOH (2), is also found to be probable for AlO etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 492: Symposium S – Microscopic Simulation of Interfacial Phenomena in Solids… , 1997 , 201
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Morinaga, H., Aoki, M., Meada, T., Fujisue, M., Tanaka, H., Toyoda, M., Mat. Res. Soc. Symp. Proc. 477, 2860 (1997)Google Scholar
2. Mori, Y., Uemura, K., Shimanoe, K., Sakon, T., J. Electrochem. Soc. 142, 3104 (1995)Google Scholar
3. Roche, T., Alder, S., Cosway, R., Schauer, S. and Liu, Lisa, in Proc. of 4th Int. Symp. on Cleaning Technology in Semiconductor Device Manufacturing, edited by Novak, R.E. and Ruzyllo, J. (Electrochamical Society Inc., Pennington, 1996) p. 257 Google Scholar
4. Becke, A.D., J. Chem. Phys. 98, 5648 (1993)Google Scholar
5. Lee, C., Yang, W. and Parr, R.G., Phys. Rev. B 37, 785 (1988)Google Scholar
6. Raghavachari, K., Higashi, G.S., Chabal, Y.J. and Trucks, G.W., Mat. Res. Soc. Symp. Proc. 315, 437 (1993)Google Scholar
7. Trucks, G.W., Raghavachari, K., Higashi, G.S. and Chabal, Y.J., Phys. Rev. Lett. 65, 504 (1990)Google Scholar