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The Etching of Silicon by Oxygen Observed by in situ Tem

  • Frances M. Ross (a1) and J. Murray Gibson

Abstract

We describe observations made in situ in a modified UHV transmission electron microscope of the process of etching of the Si (111) surface by oxygen. Etching occurs by the motion of individual bilayer steps across the surface and by analysing the step motion we discuss the etching mechanism in the context of macroscopic parameters.

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The Etching of Silicon by Oxygen Observed by in situ Tem

  • Frances M. Ross (a1) and J. Murray Gibson

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