Skip to main content Accessibility help
×
Home

Etch Process Optimization and Electrical Improvement in TiN Hard Mask Ultra-Low K Interconnection

  • Chih-Yang Chang (a1), Sean Kang (a1), Chia-ling Kao (a1), Bhargav S. Citla (a2), Nikos Bekiaris (a2), Yongmei Chen (a2), Lothar Chan-Sew (a1) and Thorsten Lill (a1)...

Abstract

As critical dimensions decrease, key dimension-related dielectric etch challenges emerge, including via and trench uniformity and etch depth profile. The transition to ultra-low-k films such as BDIII (Black Diamond; k=2.55) dielectrics requires consideration of film sensitivity to compositional modification, polymer interactions at pores, and the effect of diffusion. Use of N2/O2 plasma at 60 ˚C to modify the M1 trench profile has been demonstrated to lower the RC delay by 14% as compared to traditional CO2 plasmas at 60˚C. Use of a DHF solution to clean the etching residue in the dual damascene structure results in >97% yield with a tight range of via chain resistance.

Copyright

Corresponding author

*Corresponding author. Tel: +1-408-584-0582; E-mail: chih-yang_chang@amat.com

References

Hide All
1. Singer, Peter, “Dual-damascene challenges dielectric etch”, Semiconductor International, 22, 9page 68 (1999).
2. Ueki, Makoto, Tada, Munehiro, Tagami, Masayoshi, Narihiro, Mitsure, Ito, Fuminori and Haysahi, Yoshihiro, “A Robust Low-k/Cu Dual Damascene Interconnect (DDI) with side wall protection layer (SPL), IEEE transactions on device and materials reliability, Vol. 11, No. 1, p98 (2011).
3. Kim, Nam-Hoon, Kim, Sang-Yong, Lee, Hyun-Ki, Lee, Kang-Yeon, Kim, Chang-II and Chang, Eui-Goo, “Yield improvement of 0.13 um Cu/low-k dual-damascene interconnection by organic cleaning process”, Journal of Vacuum Science Technology B, 25(6), 1819 (2007).
4. Posseme, N., Chevolleau, T, Bouyssou, R., David, T., Arnal, V., Barnes, J.P, Verove, C. and Joubert, O., “Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms”, Journal of Vacuum Science Technology B, 29(1), 809 (2010)
5. Cheng, Yi-Lung, Chiu, Tai-Jung, Wei, Bor-Jor, Wang, Huan-Jung, Wu, Jiung and Wang, Ying-Lang, “Moisture effect on electromigration characteristics for copper dual damascene interconnection”, Journal of Vacuum Science Technology B, 28(3), 567 (2010)
6. Cheng, Yi-Lung, Chang, Wei-Yuan and Wang, Ying-Lang, “Moisture effect on electromigration characteristics for copper dual damascene interconnection”, Journal of Vacuum Science Technology B, 28(6), 1322 (2010)
7. Posseme, N., Bouyssou, R., Chevolleau, T, David, T., Arnal, V., Darnon, M., Burn, Ph., Verove, C. and Joubert, O., “Residue growth on metallic-hard mask after dielectric etching in fluorocarbonbased plasmas. II. Solutions”, Journal of Vacuum Science Technology B, 28(4), 011018 (2011)
8. Gorman, B.P, Orozco-Teran, R.A., Zhang, Z., Matz, P.D., Mueller, D.W. and Reidy, R.F., “Rapid repair of plasma ash damage in low-k dielectrics using supercritical CO2 ”, Journal of Vacuum Science Technology B, 22(3), 1210 (2010)
9. Clifford, T., Fundamentals of Supercritical Fluid (Oxford University Press, New York, 1999)

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed