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Estimation of Defect State Densities from Bulk Photoelectronic Properties of a-Si,Ge:H Alloys

Published online by Cambridge University Press:  26 February 2011

G. N. Parsons  and
G. Lucovsky
G. N. Parsons
Affiliation:
Dept. of Physics, N C State University, Raleigh, N.C. 27695-8202
G. Lucovsky
Affiliation:
Dept. of Physics, N C State University, Raleigh, N.C. 27695-8202
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Abstract

We have studied the photoelectronic properities of a- Si(x),Ge(1−x):H alloy films and have concluded that there are depletion layers at the film surface and film/oxide interface that effect the determination of bulk quantum effieciencymobility- lifetime (nuT) products. From changes in dark conductivity activation energy with film thickness and the nuT product with wavelength of incident light we have estimated defeci sta:e lensitles. Our best x=0.5 film has an nuT value of 9×10−8 cm2 V−1 andaj defect state density near the Fermi level of approximately 5×10 cm−3 eV−1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 341
Copyright
Copyright © Materials Research Society 1987

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References

1) Tanielian, M., Philos. Mag. B 45, 435 (1982).Google Scholar
2) Fritzsche, H., Solar Energy Materials 3, 447 (1980).Google Scholar
3) Jackson, W.B., Biegelsen, D.K., Nemanich, R.J. and Knights, J.C., Appl.Phys.Lett., 42, 105 (1983).Google Scholar
4) Solomon, I., Benferhat, R., Tran-Quoc, H., Phys.Rev.B 30, 3422 (1984).Google Scholar
5) Parsons, G.N., Kusano, C. and Lucovsky, G., in Disordered Semiconductors, edited by Kastner, M.A., Thomas, G.A. and Ovshinsky, S.R., (Plenum, New York, 1987).Google Scholar
6) Parsons, G.N., Kusano, C. and Lucovsky, G., J.Vac.Sci.Technol. A, 5 (July/August 1987) (in press).Google Scholar
7) Parsons, G.N. and Lucovsky, G., proceedings of Fall 1986 MRS Conference, (in press).Google Scholar
8) Rudder, R.A., Parsons, G.N., Cook, J.W., Lucovsky, G., J. Non-Cryst Solids 77 & 78, 885 (1985).Google Scholar
9) Rose, A., Concepts in Photoconductivity and Allied Problems, (Wiley, New York, 1963).Google Scholar