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ESR Studies on Hot-Wire Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

T. Unold  and
A. H. Mahan
T. Unold*
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
A. H. Mahan
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401
*
* current address: Dept. Physics, Universitaet Oldenburg, 26111 Oldenburg, FRG
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Abstract

We measure a series of hot-wire (HW) amorphous silicon films grown with hydrogen contents cH varying between 0.5–17at.%. From constant photocurrent method (CPM) measurements and the steady-state photocarrier grating method (SSPG) we find good agreement with previous measurements on similar hot-wire films. Electron spin resonance measurements on the same samples, however, yield significantly higher spin densities than expected. A thickness series indicates a highly defective layer close to the substrate interface. We propose that this defective layer may be due to excessive out diffusion of hydrogen during growth at high temperatures, as seen by secondary ion mass spectroscopy. ESR measurements on light-degraded samples indicate an improved stabilityof samples with cH < 9at.%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 663
Copyright
Copyright © Materials Research Society 1997

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References

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