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Esca Studies of the Valence band and Loss Spectra of Semiconductor Films: Ionicity and Chemical Bonding

Published online by Cambridge University Press:  22 February 2011

T. L. Barr ,
B. Kramer ,
S. I. Shah ,
M. Ray  and
E. Greene
T. L. Barr
Affiliation:
Signal Research Center Inc., Des Plaines, IL
B. Kramer
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbanaz, IL
S. I. Shah
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbanaz, IL
E. Greene
Affiliation:
Coordinated Science Laboratory, University of Illinois, Urbanaz, IL
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Abstract

ESCA valence band and core level loss results have been determined that appear to be directly related to the degree of covalency/ionicity and other bonding features of certain semi-conductor systems. Specific applications are presented that aid in the characterization of the key chemistry of dielectric oxide/semiconductor interfaces and also may help to determine the relative metastability of the solid solution of Group IV elements (e.g., Ge) into certain III-V lattices (e.g., GaAs). It is shown that these features are not detectable through conventional core level shift arguments, and that the aforementioned novel approaches often require high resolution ESCA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 47: Symposium C – Thin Films: The Relationship of Structure to Properties , 1985 , 205
Copyright
Copyright © Materials Research Society 1985

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References

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