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Erbium-Doped Barium Titanate Thin Film Waveguides For Integrated Optical Amplifiers

Published online by Cambridge University Press:  17 March 2011

Andrew R. Teren
Affiliation:
Materials Science and Engineering Department, Northwestern University, 2225 N.Campus Drive, Evanston, IL 60208 U.S.A.
Seong-Soo Kim
Affiliation:
Physics and Astronomy Department, Northwestern University, Evanston, IL 60208
Seng-Tiong Ho
Affiliation:
Electrical and Computer Engineering Department, Northwestern University,2145 Sheridan Rd., Evanston, IL 60208
Bruce W. Wessels
Affiliation:
Materials Science and Engineering Department, Northwestern University, 2225 N.Campus Drive, Evanston, IL 60208 U.S.A. Electrical and Computer Engineering Department, Northwestern University,2145 Sheridan Rd., Evanston, IL 60208
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Abstract

The factors affecting optical gain were studied for Er-doped BaTiO3 thin film waveguides. Er-doped BaTiO3 with dopant concentrations of 0.3 – 9 at.% was deposited by metal-organic chemical vapor deposition. The luminescence efficiency was maximized by optimizing the growth temperatureand erbium concentration as well as by post-deposition annealing. Stimulated emission was studied using the pump-probe technique over the spectral range of 1,520-1,550 nm. A maximum differential gain of 3 dB/cm wasmeasured at 1,540 nm in an 8 mm long, 8 μm wide ridge waveguide.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

1. Eylem, C., Sahi-Szabo, G., Chen, B.H., B.Eichhorn, Peng, J.L., Greene, R., Salamanca-Riba, L., and Nahm, S., Chem.Mater. 4, 1038 (1992).Google Scholar
2. Block, B.A. and Wessels, B.W. Appl.Phys.Lett. 65, 25 (1994).Google Scholar
3. Zhang, H.X., Kam, C.H., Zhou, Y., Han, X.Q., Xiang, Q., S. Buddhudu Lam, Y.L., and Chan, Y.C., J.Alloys and Compounds 308, 134 (2000).Google Scholar
4. Gill, D.M., Ford, G.M., Block, B.A., Wessels, B.W., and Ho, S.T., MRS Proc. 486, 343 (1998).Google Scholar
5. Gill, D.M., Ford, G.M., Block, B.A., Kim, S-S, Wessels, B.W., and Ho, S.T., Thin Solid Films 365, 126 (2000).Google Scholar
6. Ford, G.M., Teren, A., andB.Wessels, W., SPIE Proc. 3622, 101 (1999).Google Scholar
7. Yi, G.C., Block, B.A., Ford, G.M.,and Wessels, B.W., Appl.Phys. Lett. 73, 1625 (1998).Google Scholar
8. Teren, A.R. and Wessels, B.W., MRS Proc. 597, 15 (1999).Google Scholar
9. Teren, A.R., Belot, J.A., Edleman, N.L., Marks, T.J.,and Wessels, B.W., Chemical Vapor Deposition 6, 175 (2000).Google Scholar
10. Teren, A.R., PhD thesis, Northwestern University, 2001.Google Scholar