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Erbium-defect interactions in silica films implanted with MeV Er ions

Published online by Cambridge University Press:  28 February 2011

A. Polman ,
D. C. Jacobson  and
J. M. Poate
A. Polman
Affiliation:
AT&T Bell Laboratories, 600, Mountain Avenue, Murray Hill, NJ 07974, USA FOM-Institute for Atomic and Molecular Physics, P.O. Box 41883 1098 SJ Amsterdam, The Netherlands
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, 600, Mountain Avenue, Murray Hill, NJ 07974, USA
J. M. Poate
Affiliation:
AT&T Bell Laboratories, 600, Mountain Avenue, Murray Hill, NJ 07974, USA
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Abstract

The effect of ion implantation damage on energy transfer processes in Er-doped silica films prepared by MeV ion implantation is studied, using measurements of the luminescence decay of Er3+(4ƒ11) at 1.535 μm. Silica films implanted with Er and annealed at 900°C show a luminescence lifetime of 14.1 ms. Subsequent irradiation with MeV C, Si, or Ge ions at fluences as low as 1011 ions/cm2 decreases the lifetime, which eventually saturates at 6.6–7.8 ms for fluences larger than 1014 ions/cm2. The fluence required to saturate and the lifetime at saturation depend on the ion used. These results are interpreted in terms of non-radiative energy transfer processes caused by irradiation-induced defects in the silica. The ion damage effects are mainly caused by the electronic component of the energy loss along the ion trajectories.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 377
Copyright
Copyright © Materials Research Society 1992

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References

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