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Epitaxy of SiC Films on Sapphire by Laser CVD

Published online by Cambridge University Press:  25 February 2011

Hirohide Nakamatsu  and
Shichio Kawai
Hirohide Nakamatsu
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, JAPAN
Shichio Kawai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567, JAPAN
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Abstract

ArF excimer laser CVD was performed in a very-low pressure reactor. C2H2 and Si2H6 were used as source gases and carrier gases were not used. Epitaxial 3C-type SiC(111) grew parallel to α-Al2O3 (0001) substrate. It had a twin structure. Mismatch between the lattice parameters was estimated to be 12%. The epitaxial growth occurred down to 980°C and the films about 0.5μm in thickness grew at 1150°C for 30 minutes. Unirradiated films were polycrystalline or spontaneously peeling-off epitaxial films, while irradiated ones were strongly adherent epitaxial films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 189
Copyright
Copyright © Materials Research Society 1987

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References

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