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Epitaxy of Erbium Doped LiNbO3 Films Produced by Pulsed Laser Deposition

  • S. Bauer (a1), L. Beckers (a1), M. Fleuster (a1), J. Schubert (a1), W. Zander (a1) and Ch. Buchal (a1)...

Abstract

The growth of thin films of LiNbO3 and Er:LiNbO3 on LiNbO3 single crystals produced by pulsed laser deposition (PLD) was studied. Samples were characterized by RBS/Channeling Spectrometry, X-ray diffraction measurements, Secondary Ion Mass Spectroscopy (SIMS) and photoluminescence (PL) measurements. Film preparation is performed in a two-step process including deposition and in-situ-annealing. Buried Er doped layers of approx. 800 nm thickness were grown.

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Epitaxy of Erbium Doped LiNbO3 Films Produced by Pulsed Laser Deposition

  • S. Bauer (a1), L. Beckers (a1), M. Fleuster (a1), J. Schubert (a1), W. Zander (a1) and Ch. Buchal (a1)...

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