Hostname: page-component-77c89778f8-m42fx Total loading time: 0 Render date: 2024-07-23T23:05:57.303Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxy of Erbium Doped LiNbO3 Films Produced by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

S. Bauer ,
L. Beckers ,
M. Fleuster ,
J. Schubert ,
W. Zander  and
Ch. Buchal
S. Bauer
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich (KFA), D-52425 Jülich, Germany
L. Beckers
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich (KFA), D-52425 Jülich, Germany
M. Fleuster
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich (KFA), D-52425 Jülich, Germany
J. Schubert
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich (KFA), D-52425 Jülich, Germany
W. Zander
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich (KFA), D-52425 Jülich, Germany
Ch. Buchal
Affiliation:
Institut für Schicht- und lonentechnik (ISI), Forschungszentrum Jülich (KFA), D-52425 Jülich, Germany
Get access

Abstract

The growth of thin films of LiNbO3 and Er:LiNbO3 on LiNbO3 single crystals produced by pulsed laser deposition (PLD) was studied. Samples were characterized by RBS/Channeling Spectrometry, X-ray diffraction measurements, Secondary Ion Mass Spectroscopy (SIMS) and photoluminescence (PL) measurements. Film preparation is performed in a two-step process including deposition and in-situ-annealing. Buried Er doped layers of approx. 800 nm thickness were grown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 283
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Suche, H., Baumann, I., Hiller, D., and Sohler, W., Electron. Lett. 29, 1111 (1993).Google Scholar
2 Fleuster, M., Buchal, Ch., Snoeks, E., and Polman, A., J.Appl,. Phys. 75, 173 (1994).Google Scholar
3 Fleuster, M., Buchal, Ch., Snoeks, E. and Polman, A., submitted to Appl. Phys. Lett.Google Scholar
4 Stritzker, B., Schubert, J., Poppe, U., Zander, W., Krüger, U., Lubig, A., and Buchal, Ch., J. Less Common Met. 164/165, 279 (1990).Google Scholar
5 Svaasand, L.O., Eriksrud, M., Nakken, G. and Grande, A.P., J. Cryst. Growth 22, 230 (1974).CrossRefGoogle Scholar
6 Baumann, I., Brinkmann, R., Buchal, Ch., Dinand, M., Fleuster, M., Holzbrecher, H., Sohler, W., and Suche, H., in Proceedings of the European Conference on Integrated Optics (ECIO), Neuchitel, April 1993, pp. 3–14.Google Scholar