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EPITAXY OF CdTe ON (100) GaAs

  • L. A. KOLODZIEJSKI (a1), R. L. GUNSHOR (a1), N. OTSUKA (a2) and C. CHOI (a2)

Abstract

Two epitaxial orientations [(111) and (100)] of CdTe are grown on (100) GaAs in the presence of a 14.6% lattice mismatch. Consistent nucleation of a selected orientation is achieved by employing specific growth techniques. The growth techniques for selection of both orientations are described. High resolution electron microscopy has been used to investigate the interface between the CdTe epilayer and the GaAs substrate. For the (111) orientation strong interaction exists between the epitaxial deposit and the substrate, whereas a weakened interaction between deposit and substrate induces the (100) orientation.

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