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Epitaxy in the Presence of Very Large Misfit: High Resolution TEM Study of Al/Si, Ag/Si, Al/CaF2/Si and Ag/CaF2/Si

  • F. K LeGoues (a1), M. Liehr (a1) and M. Renier (a1)

Abstract

We summarize high resolution transmission electron microscopy studies of interfaces with 33% misfit. We explain the existence of epitaxial interfaces for this systems by a geometrical argument similar to the 0-lattice models used to study high angle grain boundaries. Differences between systems very similar in structures are explained. We use the thus found epitaxial interfaces to build multilayered structures of the type metal/insulator/semiconductor.

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Epitaxy in the Presence of Very Large Misfit: High Resolution TEM Study of Al/Si, Ag/Si, Al/CaF2/Si and Ag/CaF2/Si

  • F. K LeGoues (a1), M. Liehr (a1) and M. Renier (a1)

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