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Epitaxial TiSi2 Growth on Si(100) from Reactive Sputtered TiNxand Subsequent Annealing

Published online by Cambridge University Press:  21 February 2011

Jeong S. Byun ,
Kwan G. Rha  and
Woo S. Kim
Jeong S. Byun
Affiliation:
Semiconductor Research Laboratory Lab., GoldStar Electron Co. Ltd., 50 Hyangjeong-Dong Cheongju-Si, 360–480, Korea
Kwan G. Rha
Affiliation:
Semiconductor Research Laboratory Lab., GoldStar Electron Co. Ltd., 50 Hyangjeong-Dong Cheongju-Si, 360–480, Korea
Woo S. Kim
Affiliation:
Semiconductor Research Laboratory Lab., GoldStar Electron Co. Ltd., 50 Hyangjeong-Dong Cheongju-Si, 360–480, Korea
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Abstract

In this paper, we present the microstructural evolution of silicide phase with TiNxSi structure. The nitrogen atoms in the TiNx film limites the available Ti atoms that react with Si substrate to form silicide. Hence, the thickness of Ti-Si amorphous interlayer (a-interlayer) was much thinner in comparison with that from pure Ti film after annealing (RTA) at 500°C. Upon RTA at above 600°C, at first thin epitaxial C49-TiSi2 was formed with an extremely uniform thickness on Si(100) substrate. Also the stable character of the epitaxial C49-TiSi2 supress the structure transformation of TiSi2 from C49 to C54.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 465
Copyright
Copyright © Materials Research Society 1995

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