Hostname: page-component-7bb8b95d7b-495rp Total loading time: 0 Render date: 2024-09-11T22:48:30.906Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth of Titanium Nitride Films On (100) Silicon Three-Dimensional Heterostructures: Processing and Characterization

Published online by Cambridge University Press:  15 February 2011

Rina Chowdhury ,
N. Biunno  and
J. Narayan
Rina Chowdhury
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695–7916.
N. Biunno*
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695–7916.
J. Narayan
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695–7916.
*
* Zycon Corporation, 445 El Camino Real, Santa Clara, CA 95050.
Get access

Abstract

We have shown that epitaxial films can be grown on highly lattice mismatch systems by domain epitaxial growth. For titanium nitride films on (100) silicon substrates, it is shown that epitaxial growth can occur by Matching M TiN = n asi, where M and n are simple integers with values of 4 and 3 respectively, giving rise to less than 4.0% Misfit. We have investigated the formation of epitaxial titanium nitride films grown on (100) Si by pulsed laser (KrF: λ = 248 nm, τ = 25 ns) physical vapor deposition technique at different substrate temperatures, ranging from 200°C to 600°C. After optimizing the deposition conditions for epitaxial TiN film on Si, we have grown epitaxial silicon film on TiN. The epitaxial relationship was found to be <100> Si ∥ <100> TiN π <100> Si. This semiconductor-Metal-semiconductor device configuration has potential applications in three-dimensional integrated circuits and radiation hardened devices. The success of this technology is predicted on our understanding of: (a) defects at interfaces of Si/TiN/Si, and (b) stresses/strains at interfaces. This paper focuses on the nature of epitaxial growth and analyzes the atomic structures of defects at Si/TiN/Si interfaces using high resolution transmission electron Microscopy (HRTEM). These results are correlated with the results from theoretical modeling of Si/TiN/Si heterostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 199
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tung, R.T., Batstone, J.L., and Yalisove, S.M., J. Electrochem. Soc., 136, 815 (1989).Google Scholar
2. Radermacher, K., Manu, S., Kohlhof, K., and Jäger, W., J. Appl. Phys., 68, 3001 (1990).Google Scholar
3. Chowdhury, R., Chen, X., Jagannadham, K., and Narayan, J., to be published in MRS Symposia Proceedings vol 285: Laser Ablation in Materials Processing: Fundamentals & Applications, ed. by Braren, B., Dubowski, J.., and Norton, D. (1992).Google Scholar
4. Chowdhury, R., Chen, X., and Narayan, J., to be published in APL.Google Scholar
5. LeGoues, F. K., Liehr, M., Renier, M., and Krakow, W., Phil. Mag. B., 57, 179 (1988).Google Scholar
6. Narayan, J., Tiwari, P., Chen, X., Singh, J., Chowdhury, R., Zheleva, T., Appl. Phys. Lett., 61, 1290 (1992).Google Scholar
7. Dawson, P.T., and Tzatzov, K.K., Surface Science, 149, 105 (1985).Google Scholar
8. Sandgren, J. E., Johansson, B.O., and Karlsson, S.E., Surface Science, 128, 265 (1983).Google Scholar
9. Gaarenstroom, S., J. Vac. Sci. Tech., 20, 458 (1982).Google Scholar