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Epitaxial Growth of Strontium Bismuth Tantalate/Niobate on Buffered Magnesium Oxide Substrates

Published online by Cambridge University Press:  26 February 2011

George H. Thomas ,
Jonathan S. Morrell ,
Tolga Aytug ,
Ziling B. Xue  and
David B. Beach
George H. Thomas
Affiliation:
Deparment of Chemistry, University of Tennessee, Knoxville TN 37919USA
Jonathan S. Morrell
Affiliation:
Y-12 National Security Complex, Oak Ridge, TN 37831USA
Tolga Aytug
Affiliation:
Chemical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6119, USA
Ziling B. Xue
Affiliation:
Deparment of Chemistry, University of Tennessee, Knoxville TN 37919USA
David B. Beach
Affiliation:
beachdb@ornl.gov, Oak Ridge National Lab, Chemical Sciences, 1 Bethel Valley Road, Oak Ridge, TN, 37831-6119, United States, 865-574-5024
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Abstract

Epitaxial films of strontium bismuth tantalate (SrBi2Ta2O9, SBT) and strontium bismuth niobate (SrBi2Nb2O9, SBN) were grown using solution deposition techniques on magnesium oxide (MgO) substrates buffered with a 100 nm layer of lanthanum manganate (LaMnO3, LMO). Film structure and texture analyses were carried out using x-ray diffraction. Theta-2theta diffraction patterns were consistent with a c-axis aligned structure for both the buffer layer and the solution deposited films. Theta-2 theta scans revealed (001)SBT, SBN //(001) LMO epitaxial relationships between the solution deposited films and the buffer layer. A pole figure about the SBT, SBN (115) reflection indicated a single in-plane epitaxy. Film quality was assessed using ω and φ scans. Nuclear Magnetic Resonance (13C) was used to characterized the methoxy-ethoxide solutions used for the deposition of the SBN and SBT films.

Keywords

epitaxyferroelectricoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T03-46
Copyright
Copyright © Materials Research Society 2006

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