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Epitaxial Growth of Metastable Facf—Centered Cubic Co on (111)Si with A Thin Intermediate Cu Layer

Published online by Cambridge University Press:  15 February 2011

C.S. Liu  and
L.J. Chen
C.S. Liu
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
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Abstract

Metastable face—centered cubic (fcc) Co was grown epitaxially on (111)Si with an intermediate Cu layer in an ultrahigh vacuum chamber at room temperature. The metastable fcc—Co was grown to extend to a thickness of 30 nm. Polycrystalline and epitaxial hexagonal close—packed (hcp) Co was grown on (111)Si without and with 3 nm or thicker intermediate Cu layer, respectively. The key to the successful growth of fcc—Co is to deposit Co directly onto a thin (2 nm or thinner) interface compound (—Cu, which is of hcp structure and consisting of 11.2 to 14.0 at.% Si. The growth of the metastable phase is attributed to the attainment of an appropriate electron/atomratio at the interface to favor the formation of the fcc—Co.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 382: Symposium G – Structure and Properties of Multilayered Thin Films , 1995 , 129
Copyright
Copyright © Materials Research Society 1995

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