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The Epitaxial Growth of Ge on Si(100) Using Te as a Surfactant

Published online by Cambridge University Press:  15 February 2011

X. Yango ,
R. Cao ,
J. Li ,
J. Terry ,
J. Wu  and
P. Pianetta
X. Yango
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center Department of Material Science and EngineeringStanford University, Stanford, CA 94309
R. Cao
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center
J. Li
Affiliation:
Department of Material Science and EngineeringStanford University, Stanford, CA 94309
J. Terry
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center
J. Wu
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center Department of Material Science and EngineeringStanford University, Stanford, CA 94309
P. Pianetta
Affiliation:
Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center
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Abstract

The epitaxial growth of Ge on Si using Te as a surfactant has been studied with high resolution photoemission, low energy electron diffraction and cross-sectional transmission electron microscopy. The growth mode of Ge on Si changed from Stranski-Krastanov (S-K) to layer-by-layer mode when 1/4 ML Te atoms were on the surface. During the growth, Te atoms segregated to the top of the surface. If the growth temperature is too high (above ∼450°C), the Te coverage was less than that necessary to keep the layer-by-layer growth, and the growth mode of Ge on Si is still S-K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 243
Copyright
Copyright © Materials Research Society 1993

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