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Epitaxial Growth of GaN Films Produced by ECR-Assisted MBE

Published online by Cambridge University Press:  21 February 2011

T.D. Moustakas
T.D. Moustakas*
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical Engineering and Center for Photonics Research, Boston University, Boston, MA 02215
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Abstract

The epitaxial growth of wurtzite and zincblende GaN on (0001) sapphire and (001) Si by the Electron Cyclotron Resonance-assited Molecular Beam Epitaxy (ECR-MBE) method is discussed. We show that films can be grown in the layer-by-layer mode when growth occurs in Ga-rich regime. Surface roughening mechanisms are addressed. The similarity of photoluminescence data of Mg-doped wurtzite GaN films with those of undoped zincblende GaN films suggests that Mg doping facilitates the formation of stacking faults in the wurtzite structure which are nucleation sites for zincblende domains.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 111
Copyright
Copyright © Materials Research Society 1996

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References

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