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Epitaxial Growth of Diamond on an Iridium (100) Substrate by Microwave Plasma-Assisted Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

Toshiki Tsubota ,
Shigenori Tsuruga ,
Takeyasu Saito ,
Katsuki Kusakabe ,
Shigeharu Morooka  and
Hideaki Maeda
Toshiki Tsubota
Affiliation:
Department of Materials Physics and Chemistry
Shigenori Tsuruga
Affiliation:
Department of Materials Physics and Chemistry
Takeyasu Saito
Affiliation:
Department of Materials Physics and Chemistry
Katsuki Kusakabe
Affiliation:
Department of Materials Physics and Chemistry
Shigeharu Morooka
Affiliation:
Department of Materials Physics and Chemistry
Hideaki Maeda
Affiliation:
Department of Chemistry and Biochemistry, Graduate School of Engineering, Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka 812- 8581, Japan, tsubota@cstf.kyushu-u.ac.jp
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Abstract

Diamond films were grown heteroepitaxially on iridium (100) substrates by microwave plasma-assisted chemical vapor deposition (MPCVD) using methane gas as the carbon source. The iridium substrate, which was formed on a MgO (100) substrate by means of sputtering at 850 °C, was treated by imposing a negative bias between -150 and -200 V for 15 min. Methane concentration and substrate temperature were maintained at 3° and 650–740 °c, respectively. At a substrate temperature of 740 °C, diamond particles were formed at a population density of (0.15- 1.5)x108 cm-2, and most of them were oriented to MgO (100). After a further reaction for 1 h under conditions which were optimized for diamond growth, the oriented diamond particles were coalesced, and islands of (100) diamond were formed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 555: Symposium OO – Properties and Processing of Vapor-Deposited Coatings , 1998 , 333
Copyright
Copyright © Materials Research Society 1999

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