- Cited by 25
Mort, J. Machonkin, M. A. and Okumura, K. 1991. Compensation effects in nitrogen‐doped diamond thin films. Applied Physics Letters, Vol. 59, Issue. 24, p. 3148.
Gildenblat, G.S. Grot, S.A. and Badzian, A. 1991. The electrical properties and device applications of homoepitaxial and polycrystalline diamond films. Proceedings of the IEEE, Vol. 79, Issue. 5, p. 647.
Chu, C. J. D’Evelyn, M. P. Hauge, R. H. and Margrave, J. L. 1991. Mechanism of diamond growth by chemical vapor deposition on diamond (100), (111), and (110) surfaces: Carbon‐13 studies. Journal of Applied Physics, Vol. 70, Issue. 3, p. 1695.
Savvides, N. and Bell, T. J. 1992. Microhardness and Young’s modulus of diamond and diamondlike carbon films. Journal of Applied Physics, Vol. 72, Issue. 7, p. 2791.
Tessmer, A.J. Plano, L.S. and Dreifus, D.L. 1993. High-temperature operation of polycrystalline diamond field-effect transistors. IEEE Electron Device Letters, Vol. 14, Issue. 2, p. 66.
Tsang, R.S. May, P.W. Ashfold, M.N.R. and Rosser, K.N. 1998. Influence of phosphine on the diamond growth mechanism: a molecular beam mass spectrometric investigation. Diamond and Related Materials, Vol. 7, Issue. 11-12, p. 1651.
Kohn, Erhard and Ebert, Wolfgang 1998. Low-Pressure Synthetic Diamond. p. 331.
Sakaguchi, Isao N.-Gamo, Mikka Kikuchi, Yuko Yasu, Eiji Haneda, Hajime Suzuki, Toshimitsu and Ando, Toshihiro 1999. Sulfur: A donor dopant forn-type diamond semiconductors. Physical Review B, Vol. 60, Issue. 4, p. R2139.
Haubner, R Bohr, S and Lux, B 1999. Comparison of P, N and B additions during CVD diamond deposition. Diamond and Related Materials, Vol. 8, Issue. 2-5, p. 171.
Nishitani-Gamo, Mikka Yasu, Eiji Xiao, Changyong Kikuchi, Yuko Ushizawa, Koichi Sakaguchi, Isao Suzuki, Toshimitsu and Ando, Toshihiro 2000. Sulfur-doped homoepitaxial (001) diamond with n-type semiconductive properties. Diamond and Related Materials, Vol. 9, Issue. 3-6, p. 941.
Kohn, E Adamschik, M Schmid, P Denisenko, A Aleksov, A and Ebert, W 2001. Prospects of diamond devices. Journal of Physics D: Applied Physics, Vol. 34, Issue. 16, p. R77.
Nishitani-Gamo, Mikka Xiao, Changyong Zhang, Yafei Yasu, Eiji Kikuchi, Yuko Sakaguchi, Isao Suzuki, Toshimitsu Sato, Yoichiro and Ando, Toshihiro 2001. Homoepitaxial diamond growth with sulfur-doping by microwave plasma-assisted chemical vapor deposition. Thin Solid Films, Vol. 382, Issue. 1-2, p. 113.
Tamura, Hiroyuki Zhou, Hui Takami, Seiichi Kubo, Momoji Miyamoto, Akira N.-Gamo, Mikka and Ando, Toshihiro 2001. Effect of S and O on the growth of chemical-vapor deposition diamond (100) surfaces. The Journal of Chemical Physics, Vol. 115, Issue. 11, p. 5284.
Dandy, David S 2001. Influence of the gas phase on doping in diamond chemical vapor deposition. Thin Solid Films, Vol. 381, Issue. 1, p. 1.
Haubner, R. and Sommer, D. 2003. Hot-filament diamond deposition with sulfur addition. Diamond and Related Materials, Vol. 12, Issue. 3-7, p. 298.
Haubner, R. 2004. Diamond deposition with sulfur addition—thermodynamic calculations. Diamond and Related Materials, Vol. 13, Issue. 4-8, p. 648.
Kar, S and Chaudhuri, S 2004. Optical properties of diamond films deposited by low temperature microwave plasma CVD from camphor. Materials Letters, Vol. 58, Issue. 24, p. 3029.
Haubner, R. 2005. Comparison of sulfur, boron, nitrogen and phosphorus additions during low-pressure diamond deposition. Diamond and Related Materials, Vol. 14, Issue. 3-7, p. 355.
Blase, Xavier Benedek, Giorgio and Bernasconi, Marco 2010. Computer-Based Modeling of Novel Carbon Systems and Their Properties. Vol. 3, Issue. , p. 171.
Ullah, Mahtab Ahmed, Ejaz Hussain, Fayyaz Rana, Anwar Manzoor Raza, Rizwan and Ullah, Hafeez 2015. Electronic structure calculations of oxygen-doped diamond using DFT technique. Microelectronic Engineering, Vol. 146, Issue. , p. 26.
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For the practical application of diamond semiconductor devices, the manufacture of planar-type devices is important. Homoepitaxial growth of diamonds would be a useful technique for making semiconducting diamond films. Homo-epitaxial growth of diamonds is achieved by microwave plasma CVD. The properties of epitaxial diamond films depend on the deposition condition and the substrate orientation. Boron doping was easily carried out by this method and boron doped films were determined to be ptype semiconductors. Properties of boron doped epitaxial films were found to be similar to those of natural IIb diamond. The Schottky junction on boron doped epitaxial films was obtained by the deposition of tungsten and aluminum. The Schottky properties of this combination were affected by the surface roughness of the epitaxial films. A field effect transistor and a light emitting device were successfully fabricated using boron doped epitaxial films and Schottky junctions.
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