Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-24T02:26:27.293Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN2

Published online by Cambridge University Press:  15 February 2011

L.D. Zhu ,
P.H. Maruska ,
P.E. Norris ,
P.W. Yip  and
L.O. Bouthillette
L.D. Zhu
Affiliation:
NZ Applied Technologies, 8A Gill Street, Woburn, MA 01801, zhu@nzat2.tiac.net
P.H. Maruska
Affiliation:
NZ Applied Technologies, 8A Gill Street, Woburn, MA 01801, zhu@nzat2.tiac.net
P.E. Norris
Affiliation:
NZ Applied Technologies, 8A Gill Street, Woburn, MA 01801, zhu@nzat2.tiac.net
P.W. Yip
Affiliation:
Air Force Research Laboratory, 80 Scott Dr., Hanscom AFB, MA 01731
L.O. Bouthillette
Affiliation:
Air Force Research Laboratory, 80 Scott Dr., Hanscom AFB, MA 01731
Get access

Abstract

A new nitride semiconductor, single crystalline ZnGeN2 has been successfully grown by MOCVD for the first time. The epitaxial ZnGeN2 is found to be of hexagonal wurtzite lattice without ordering of the zinc and germanium atoms in the pseudomorphic Group III sublattice. Lattice constants of the ZnGeN2 are a = 3.186 ± 0.007 A, c = 5.174 ± 0.012 A, which gives c/a = 1.624.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.8
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Pankove, J.I., The satellite Workshop of the 2nd Int. Conf on Nitride Semicond. (Nov. 1, 1997 Tokushima, Japan) p. 1.Google Scholar
2. Johnson, W.C., Parsons, J.B., and Crew, M.C., J. Phys. Chem., 36, 2561 (1932).Google Scholar
3. Maruska, H.P. and Tietjen, J.J., Appl. Phys. Lett., 15, 367 (1969).Google Scholar
4. Goodman, C.H.L., Nature, 179, 828 (1975).Google Scholar
5. Shay, J.L. and Wernick, J.H., Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications, Pergamon Press, 1975.Google Scholar
6. Maunaye, M. et Lang, J., Mater. Res. Bull., 5, 793 (1970).Google Scholar
7. Endo, T., Sato, Y., Takizawa, H., Shimada, M., J. Mater. Sci. Lett., 11, 424 (1992).Google Scholar