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Epitaxial Films of Cobalt Disilicide (100) Evaporated onto Si (100) from a Mixed Source

Published online by Cambridge University Press:  15 February 2011

P. T. Goeller ,
Z. Wang ,
D. E. Sayers ,
J. T. Glass  and
R. J. Nemanich
P. T. Goeller
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
Z. Wang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
D. E. Sayers
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
J. T. Glass
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
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Abstract

Thin films of (100) oriented CoSi2 have been electron beam evaporated onto Si(100)substrates from a mixed Co-Si target. A sharp c(2×2) low energy electron diffraction (LEED)pattern resulted after annealing the films to 800°C. Extended x-ray absorption fine structure (EXAFS) of the film indicated the phase to be CoSi2. Quantitative x-ray photoelectron spectroscopy (XPS) analysis revealed the surface of the film to be slightly Si rich, indicating the Si terminated CoSi2 variant. Analysis of transmission electron microscope (TEM) diffraction patterns also provided evidence of the (100) orientation of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 511
Copyright
Copyright © Materials Research Society 1996

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