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Epitaxial Deposition of 3C-SiC on Si Using Unconventional Sputtering of a Hollow Cathode

  • James L Huguenin-Love (a1), Rodney J Soukup (a2), Natale J Ianno (a3) and Nole T Lauer (a4)

Abstract

Epitaxial 3C-SiC was grown using an unconventional technique for epitaxial growth. Thin films of 3C-SiC were deposited onto the (111) and (110) faces of Si using pulsed DC sputtering of a high purity, hollow cathode SiC target. The films were studied using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), and auger electron spectroscopy (AES) techniques. XRD results presented as Bragg diffraction spectra and pole figures, and electron diffraction patterns verify crystal orientation and epitaxy. In addition, AES profiles identify the compositional integrity of the deposited films.

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1 Cooper, J. Jr , Mater. Sci. Forum 389–393, 1522 (2002).
2 Nelson, W. E., Halden, F. A. and Rosengreen, A., J. Appl. Phys. 37 (1), 333336 (1966).
3 Khan, I. H., Mater. Res. Bull. 4, S285–S292 (1969).
4 Suemitsu, M., Miyamoto, Y., Handa, H. and Konno, A., e-Journal of Surface Science and Nanotechnology 7, 311313 (2009).
5 Volz, K., Schreiber, S., Gerlach, J. W., Reiber, W., Rauschenbach, B., Stritzker, B., Assmann, W. and Ensinger, W., Mater. Sci. Eng. A 289 (1-2), 255264 (2000).
6 Zheng, H., Zhu, J., Fu, Z., Lin, B. and Li, X., J. Mater. Sci. Technol. 21 (4), 536540 (2005).
7 Nishiguchi, T., Nakamura, M., Nishio, K., Isshiki, T. and Nishino, S., Appl. Phys. Lett. 84 (16), 3082-3084 (2004).
8 Schrader, J. S., Huguenin-Love, J., Soukup, R. J., Ianno, N. J., Exstrom, C. L., Darveau, S. A., Udey, R. N. and Dalal, V. L., Sol. Energy Mater. Sol. Cells 90 (15), 23382345 (2006).
9 Soukup, R. J., Huguenin-Love, J., Ianno, N. J. and Thompson, D. W., J. Vac. Sci. Technol. A 26 (1), 1722 (2008).
10 Soukup, R. J., Ianno, N., Huguenin-Love, J., Lauer, N., Hofmann, T. and Hubicka, Z., ECS Trans. 16 (7), 201-210 (2008).
11 Soukup, R. J., Ianno, N. J. and Huguenin-Love, J., Sol. Energy Mater. Sol. Cells 91 (15-16), 13831387 (2007).

Keywords

Epitaxial Deposition of 3C-SiC on Si Using Unconventional Sputtering of a Hollow Cathode

  • James L Huguenin-Love (a1), Rodney J Soukup (a2), Natale J Ianno (a3) and Nole T Lauer (a4)

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