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Epitaxial CoSi2 Film Formation on (100) Si by Annealing of Co/Ti/Si Structure in N2

Published online by Cambridge University Press:  15 February 2011

Shinichi Ogawa ,
M. lawrence ,
A. Dass ,
James A. Fair ,
Takashi Kouzaki  and
David B. Fraser
Shinichi Ogawa
Affiliation:
Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570, Japan
M. lawrence
Affiliation:
Intel Corp., 2200 Mission College Blvd., SC2-24, Santa Clara, CA 95052
A. Dass
Affiliation:
Intel Corp., 2200 Mission College Blvd., SC2-24, Santa Clara, CA 95052
James A. Fair
Affiliation:
Varian, Ginzton Research Center, 3075 Hansen Way, Palo Alto, CA 94304
Takashi Kouzaki
Affiliation:
Matsushita Technoresearch Inc., 3-1-1 Yagumo-Nakamachi, Moriguchi, Osaka 570, Japan
David B. Fraser
Affiliation:
Intel Corp., 2200 Mission College Blvd., SC1-03, Santa Clara, CA 95052
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Abstract

CoSi2 was formed by annealing a multilayer strucure of sputter deposited Co / Ti / Si. The Ti was 1, 2 or 5 nm thick and the Co was 15 nm thick. The morphology of both the surface and the CoSi2 / Si interface was examined. For the sample that had 2 nm Ti layer, an epitaxial CoSi2 was formed with both a planar surface and a planar CoSi2 / Si interface. An amorphous Ti-Si-O layer was initially formed between the Co and the Si. Co then diffused through this layer and directly formed epitaxial CoSi2 on the Si<100>. No intermediate silicide phases of Co were observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 193
Copyright
Copyright © Materials Research Society 1993

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References

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