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Enhancement Mode GaN MOSFETs on Silicon Substrates with High Field-effect Mobility

  • Hiroshi Kambayashi (a1), Yuki Niiyama (a2), Shinya Ootomo (a3), Takehiko Nomura (a4), Masayuki Iwami (a5), Yoshihiro Satoh (a5), Sadahiro Kato (a5) and Seikoh Yoshida (a5)...

Abstract

In this report, we have demonstrated enhancement-mode n-channel GaN MOSFETs on silicon (111) substrates. We observe a high field-effect mobility of 115 cm2/Vs, the best report for GaN MOSFET fabricated on a silicon substrate to our knowledge. The threshold voltage was estimated to be +2.7 V, and the maximum operation current was over 3.5 A. This value is the largest which have ever been reports.

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Keywords

Enhancement Mode GaN MOSFETs on Silicon Substrates with High Field-effect Mobility

  • Hiroshi Kambayashi (a1), Yuki Niiyama (a2), Shinya Ootomo (a3), Takehiko Nomura (a4), Masayuki Iwami (a5), Yoshihiro Satoh (a5), Sadahiro Kato (a5) and Seikoh Yoshida (a5)...

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