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Enhanced Thermal Conductivity of CVD SiC via Beryllium and Boron Dopings

Published online by Cambridge University Press:  15 February 2011

W. Kowbel
Affiliation:
MER Corporation, 7960 S. Kolb Road, Tucson, AZ 85706
F. Gao
Affiliation:
MER Corporation, 7960 S. Kolb Road, Tucson, AZ 85706
J. C. Withers
Affiliation:
MER Corporation, 7960 S. Kolb Road, Tucson, AZ 85706
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Abstract

SiC-SiC composites exhibit excellent mechanical and corrosion properties, which are desired for a variety of advanced applications including fusion reactors, heat exchangers and advanced turbine engines. However, SiC-SiC composites fabricated by the CVI methods have unacceptably low through-the-thickness thermal conductivity, which limits their use in these applications. CVD SiC co-deposition with either beryllium or boron compounds significantly enhanced the thermal conductivity of CVD SiC at temperatures up to 1000°C. Results pertinent to the doping processes and the measured thermal conductivity of doped CVD SiC are reported. Mechanisms for the enhanced thermal conductivity of the CVD SiC are discussed based on the microstructural characteristics of the doped specimens.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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