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Enhanced Surface Diffusion in Low-temperature a-Si:H Processing

Published online by Cambridge University Press:  21 March 2011

George T. Dalakos ,
Joel L. Plawsky  and
Peter D. Persans
George T. Dalakos
Affiliation:
General Electric Global Research Center, Niskayuna, NY
Joel L. Plawsky
Affiliation:
Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, NY
Peter D. Persans
Affiliation:
Department of Physics, Rensselaer Polytechnic Institute, Troy, NY
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Abstract

Glow discharge amorphous hydrogenated silicon (a-Si:H) prepared at near room temperature typically results in an inhomogeneous morphology that is undesirable for a number of thin film applications. The most commonly observed features of this include columnar morphology and surface roughness. This usually results from anodic deposition, where substrates are placed on the grounded electrode. We have discovered that placing substrates on the RF-powered electrode (referred to as cathodic deposition) offers a much wider processing range for homogenous growth than anodic growth. We have also found that the magnitude of the surface roughness and the bulk void fraction of both anodic and cathodic a-Si:H thin films processed at low-temperatures is proportional to ∼D/F, where D is the surface diffusivity and F, the adatom flux, though anodic and cathodic deposition affect these global parameters differently. Surface processes unique to cathodic deposition can enhance adatom surface diffusion, while diffusion during anodic deposition is fixed and cannot attain homogeneous growth at high adatom fluxes. Processing a-Si:H on the cathode, associated with enhanced adatom surface diffusion, allows for homogeneous growth even at high deposition rates that has benefits for a number of applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.33
Copyright
Copyright © Materials Research Society 2004

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