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Enhanced Luminescence and Optical Cavity Modes from Uniformly Etched Porous Silicon

Published online by Cambridge University Press:  25 February 2011

Vincent V. Doan ,
C. L. Curtis ,
G. M. Credo ,
M. J. Sailor  and
R. M. Penner
Vincent V. Doan
Affiliation:
Department of Chemistry, University of California at San Diego, La Jolla, CA 92093-0506
C. L. Curtis
Affiliation:
Department of Chemistry, University of California at San Diego, La Jolla, CA 92093-0506
G. M. Credo
Affiliation:
Department of Chemistry, University of California at San Diego, La Jolla, CA 92093-0506
M. J. Sailor
Affiliation:
Department of Chemistry, University of California at San Diego, La Jolla, CA 92093-0506
R. M. Penner
Affiliation:
Institute for Surface and Interface Science, Department of Chemistry, University of California at Irvine, Irvine, CA 92717
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Abstract

Uniform layers of porous silicon have been produced in a photoelectrochemical etch that show intensity enhancements of up to 100 fold, relative to samples etched in the dark. These films can also show fine structure in their photoluminescence (PL) spectra characteristic of longitudinal optical cavity modes. The highly luminescent, uniform porous layer is generated by illumination with blue or green light during the electrochemical etch of singlecrystal (B-doped) Si, and the enhancement is attributed to a localized photochemical etch process. The relevance of the increased PL intensity and interference-induced spectral changes to measurements of the intrinsic emission spectrum of porous Si are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 185
Copyright
Copyright © Materials Research Society 1993

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