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Enhanced Conductivity in n-Type Microcrystalline Silicon

Published online by Cambridge University Press:  28 February 2011

E. A. T. Dlrani ,
A. M. de Andrade  and
I. Pereyra
E. A. T. Dlrani
Affiliation:
Lab. de Microeletrônica - Escola Politécnica - Univ. de Sao Paulo Cx. P.8174, CEP 05508–900, Säo Paulo, Brazil. E-mail: amdandra@bruspvm.bitnet
A. M. de Andrade
Affiliation:
Lab. de Microeletrônica - Escola Politécnica - Univ. de Sao Paulo Cx. P.8174, CEP 05508–900, Säo Paulo, Brazil. E-mail: amdandra@bruspvm.bitnet
I. Pereyra
Affiliation:
Lab. de Microeletrônica - Escola Politécnica - Univ. de Sao Paulo Cx. P.8174, CEP 05508–900, Säo Paulo, Brazil. E-mail: amdandra@bruspvm.bitnet
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Abstract

Phosphorus doped μc-Sl:H films have been prepared in a PECVD system from SiH4 + PH3 + H2 gaseous mixtures. The films are obtained as a result of the competition between two simultaneously occuring processes: a deposition one and an etching one due to the high concentration of hydrogen in the plasma. This competition process favours the growth of films with crystalline structure.

Highly conductive μc-Si:H layers, in the range of 20 ∼ 30 S.cm-1, were obtained for samples in the range of 70 to 85 nm thick. From Raman Dispersion Spectroscopy and X-Ray Diffraction measurements, evidences of the dominant role of the crystalline phase in the charge transport mechanisms are shown.

Through Infrared Spectroscopy measurements it was possible to obtain the concentration of the SiHn groups on the μc-Si:H n+ structure and to Infer their role on the electrical properties of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 585
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Matsuda, A.. et al., Jpn. J. Appl. Phys. 19, p. L305. 1980.Google Scholar
2. Veprek, S., et al., Proc. 9th Internat. Conf. Amorph. Liq. Semic., p. C4–251, 1981.Google Scholar
3. Nakaml, K., et al., J. Non-Cryst. Sol. p. 297, 1983.Google Scholar
4. Germer, W., et al., Sensors and Act. 4, p. 183, 1983.Google Scholar
5. Weprek, S., Chimia 34, p. 489, 1981.Google Scholar
6. Tsai, C.C., et al., J. Non-Cryst. Sol. p. 151. 1989.Google Scholar
7. Martins, R., et al., Proc. 5th Eur. PV. Solar Energy Conf., p. 778. 1983.Google Scholar
8. Pereyra, I., et al., Proc. 7th Eur. PV. Solar Energy Conf., p. 528, 1986.Google Scholar
9. Tiedje, T. in Hydrogenated Amorphous Silicon. Pankove, J.I. ed., Semiconductors and Semimetals, v. 21, part C. Academic Press, Orlando, 1984.Google Scholar