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Energy Dispersion Contour Approach to Calculate Optical Properties of Quantum Well Structures

Published online by Cambridge University Press:  15 February 2011

T. Osotchan ,
W. Shi  and
D.H. Zhang
T. Osotchan
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
W. Shi
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
D.H. Zhang
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
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Abstract

In order to calculate optical properties i.e. dielectric function, refractive index and absorption coefficient, the evaluation of integration including ground and excited wavefunctions is required over entire k-space. The contour of energy dispersion was proposed to form the criteria to select and limit the value of k in the integration. With the contour approach the integration can be determined to truncate at certain k value where the weight factor of Fermi-Dirac distribution function become very small and the fraction of integration can be ignored. The approach was applied to AIGaAs/AlAs/GaAs double barrier quantum well structures with 14-band k.P Hamiltonian. By systematically modifing this quantum well structure the dependence of absorption peak width was investigated in bound-to-bound and bound-to-quasibound intersubband transitions. The energy dispersion contours of each involved state were illustrated in two dimensional k-space including the compositions in perpendicular and parallel directions to the interface. The calculated refractive index and absorption as a function of wavelength can be simply extracted from the contour characteristic especially at the constant Fermi energy surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 579: Symposium B – The Optical Properties of Materials , 1999 , 207
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Larkins, E.C., Schneider, H., Ehret, S., Fleibner, J., Dishler, B., Koidl, P., and Ralston, J.D., IEEE Trans. Electron Dev. 41, pp. 511–518, (1994).Google Scholar
[2] Liu, H.C., Buchanan, M., and Wasilewski, Z.R., J. Appl. Phys. 83, pp. 6178–6181, (1998).Google Scholar
[3] Osotchan, T., Chin, V.W.L., Vaughan, M.R., Tansley, T.L., and Goldys, E.M., Phys. Rev. B 50, pp. 2409–2419, (1994-I).Google Scholar
[4] Osotchan, T., Chin, V.W.L., and Tansley, T.L., Phys. Rev. B 54, pp. 2059–2066, (1996-I).Google Scholar
[5] Flatte, M.E., Youg, P.M., Peng, L.-H., and Ehrenreich, H., Phys. Rev. B 53, pp. 1963–1978, (1996-II).Google Scholar
[6] Johnson, N.F., Ehrenreich, H., Hui, P.M., and Youg, P.M., Phys. Rev. B 41, pp. 3655–3669, (1990-II).Google Scholar
[7] Batty, W. and Shore, K.A., IEE Proc.-Optoelectron. 145, pp. 21–30, (1998).Google Scholar
[8] Levinshtein, M., Rumyantsev, S., and Shur, M., Handbook series on semiconductor parameters volume 2: ternary and quaternary A3B5semiconductors, World Scientific, Singapore, 1999.Google Scholar
[9] Peng, L. H. and Fonstad, C.G., J. Appl. Phys. 77, pp. 747–754, (1995).Google Scholar