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Emissivtty Studies on Polycrystalline Silicon and a-Si / SiO2 / Si

Published online by Cambridge University Press:  10 February 2011

W. Chen
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
M. Oh
Affiliation:
Lucent Technologies, Bell Laboratories, Orlando, FL 32819
S. Abedrabbo
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
F. M. Tong
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
W. Schmidt
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
S. Narayanan
Affiliation:
Solarex (A Business Unit of Amoco/Enron Solar), Frederick, MD 21703
B. Sopori
Affiliation:
National Renewable Energy Laboratory, 1617 Cola Blvd., Golden. CO 80401
N. M. Ravindra
Affiliation:
New Jersey Institute of Technology, Newark, NJ 07102
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Abstract

Experimental studies of the room temperature emissivity of polysilicon are reported here. These measurements have been performed using a spectral emissometer operating in the wavelength range of 0.8 – 20 μm. The measured optical properties are deconvolved to yield the wavelength dependent refractive indices and extinction coefficient of polysilicon. An in house developed computer program, OPCalc, is deployed to perform these calculations. Experimental results of the temperature dependent emissivity of a-Si / SiO2 / Si / SiO2 / a-Si, fabricated on single side polished silicon substrates, in the temperature range of 300 to 1100 K have been reported here. These measurements are performed for a-Si thickness of 2100A. Comparisons of the temperature dependent radiative properties of these structures between the front and the back show that the contribution of surface roughness to emissivity is negligible- The exposure of these a-Si coated structures to high temperatures in open environment has caused these surfaces to oxidize. Interpretations, have been sought by comparisons of the experimental data with those on SiO2 / Si structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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