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Emission Efficiency in InAs LEDs Controlled by Surface Recombination

Published online by Cambridge University Press:  10 February 2011

M J Kane ,
G Braithwaite ,
M T Emeny ,
D Lee ,
T Martin  and
D R Wight
M J Kane
Affiliation:
Defence Research Agency, St Andrews Rd Malvern Worcs, WR14 3PSU.K.
G Braithwaite
Affiliation:
Defence Research Agency, St Andrews Rd Malvern Worcs, WR14 3PSU.K. AMG Systems Ltd, Biggleswade, SG18 8QB, U.K.
M T Emeny
Affiliation:
Defence Research Agency, St Andrews Rd Malvern Worcs, WR14 3PSU.K.
D Lee
Affiliation:
Defence Research Agency, St Andrews Rd Malvern Worcs, WR14 3PSU.K.
T Martin
Affiliation:
Defence Research Agency, St Andrews Rd Malvern Worcs, WR14 3PSU.K.
D R Wight
Affiliation:
Defence Research Agency, St Andrews Rd Malvern Worcs, WR14 3PSU.K.
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Abstract

In this paper, light emitting diodes (LEDs) are used to study the recombination dynamics of minority electrons in p type InAs. The LEDs operate through injecting electrons into p type material with a free surface. When surface recombination is dominant, the output of the LEDs is shown to depend only on the strength of the radiative recombination and not on its efficiency. When surface recombination is not dominant, the dependence of the LED efficiency on the thickness of the active layer is analysed to give the minority carrier diffusion lengths and recombination efficiencies. the electron diffusion lenSgth is shown to be 3±0.5 μm in 5×10−18 cm−3 p type InAs and 6±1 pm in 2×10 cm−3 p type material. An upper limit of∼2.1×10−28 cm6 s−1 is deduced for the total Auger recombination rate constant in p type material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 129
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1 Bergh, A A and Dean, P J, Light Emitting Diodes (Clarendon Press, London 1976)Google Scholar
2 Dixon, J. R. and Ellis, J. M., J. Appl. Phys. 123 1560 (1960)Google Scholar
3 Measurements on p type InAs indicate that the absorption in p InAs at ∼3.45 μm is little changed by doping densities up to 5×1018 cm−3.Google Scholar
4 Landolt-Bornstein, , Numerical Data and Functional relationships in Science and Technology 17a (Springer Verlag Heidelberg 1982)Google Scholar
5 Moss, T. S., Burrell, G. J. and Ellis, B., Semiconductor Opto-electronics (Butterworths, London 1973) p 244 Google Scholar
6 Wight, D R Chapter 1 in Howes, M. J. and Morgan, D. V. ed. Gallium Arsenide Materials. Devices and Circuits (Wiley Interscience Chichester 1985).Google Scholar
7 Takeshima, M, Jap. J. Appl. Phys. 22 491 (1983)Google Scholar
8 Sugimura, A J. Appl. Phys. 51 4405 (1980)Google Scholar