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Elimination of Defects in Laser-Recrystallized SOI by Stress Relief

Published online by Cambridge University Press:  28 February 2011

Andre Martinez ,
Ranjana Pandya  and
Emil Arnold
Andre Martinez
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, NY 10510
Ranjana Pandya
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, NY 10510
Emil Arnold
Affiliation:
Philips Laboratories, North American Philips Corp., Briarcliff Manor, NY 10510
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Abstract

We report the application of a stress-relief technique aimed at reducing the density of dislocations and subgrain boundaries in laser-recrystallized Silicon-On-Insulator (SOI) material. By providing alternate mechanisms for relieving the stresses responsible for defect generation in the Si film, it is possible to exercise a large degree of control over the subgrain boundary density. Large areas of SOI material completely free of dislocations and subgrain boundaries have been obtained by inserting a low-viscosity layer under the silicon film and using an appropriately shaped cw laser beam as the heat source. During the process of zone-melt recrystallization this layer softens and provides an alternative stress relief mechanism, thus reducing the mechanical constraint on the growing crystal. Several examples of subgrain boundary control are described, which have resulted in crystalline regions in excess of 300 μm by several millimeters completely free of low-angle grain boundaries and dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 415
Copyright
Copyright © Materials Research Society 1988

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