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Electroreflectance Study of Light-Emitting Porous Silicon

Published online by Cambridge University Press:  17 March 2011

Toshihiko Toyama ,
Akihito Shimode  and
Hiroaki Okamoto
Toshihiko Toyama
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University Toyonaka, Osaka 560-8531, Japan
Akihito Shimode
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University Toyonaka, Osaka 560-8531, Japan
Hiroaki Okamoto
Affiliation:
Department of Physical Science, Graduate School of Engineering Science, Osaka University Toyonaka, Osaka 560-8531, Japan
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Abstract

Electroreflectance spectroscopy measurements have been performed on light-emitting porous Si (LEPSi). The transmission electron microscope measurements reveal that LEPSi includes Si nanocrystals with a mean crystal size of 1–2 nm. The ER features are observed at a transition energy of 3.4 eV in all of the samples, giving that LEPSi still keeps the threedimensional (3D) electronic structure. Changes in the transition energies are not found for LEPSi with the different mean crystal sizes. Furthermore, we directly observed interband transitions of quantized states due to quantum-confined electron-hole (e-h) pairs in LEPSi as two or three extra ER features being located between 1.2 and 3.1 eV which are never observed in bulk crystalline Si. Employing a simple effective mass approximation model, we have evaluated the reduced mass, the kinetic energies and the Coulomb attraction energies of the quantumconfined e-h pairs. We also found that the energy distance between the transition energies at the ground state and the photoluminescence (PL) peak energies basically corresponds to the Coulomb attraction energies. Finally, we propose a new luminescent model based on interband transitions involving the quantum-confined dense e-h plasma.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A24.10
Copyright
Copyright © Materials Research Society 2000

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References

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