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Electronics Application for Fullerenes

Published online by Cambridge University Press:  22 February 2011

R.L. McNally ,
F R. Brotzen ,
A.J. Griffin Jr. ,
P.J. Loos  and
E.V. Barrera
R.L. McNally
Affiliation:
Rice University, Department of Materials Science, Houston, Texas 77251-1892
F R. Brotzen
Affiliation:
Rice University, Department of Materials Science, Houston, Texas 77251-1892
A.J. Griffin Jr.
Affiliation:
Rice University, Department of Materials Science, Houston, Texas 77251-1892
P.J. Loos
Affiliation:
Texas Instruments, Inc., Houston Wafer Fab, Stafford, Texas 77251-1443
E.V. Barrera
Affiliation:
Rice University, Department of Materials Science, Houston, Texas 77251-1892
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Abstract

Thin-film Al-C60-Al trilayered structures were sublimated under ultra high vacuum (UHV) conditions for the purpose of investigating their current-voltage (I-V) properties. These metal-semiconductor-metal devices exhibited rapid and irreversible drop in resistance of about two orders of magnitude under an applied voltage of 0.67 to 0.75V. Approximate initial and final resistances were 1050 Ω and 8 Ω respectively. Wavelength Dispersive Spectroscopy (WDS) indicated no noticeable change in phase of the fullerene inter-layer after the irreversible drop in resistance. These results, SEM micrographs and concentration profiles were concordant with diffusion of top layer Al through the fullerene layer as the most likely cause of the change in resistance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 349: Symposium T – Novel Forms of Carbon II , 1994 , 205
Copyright
Copyright © Materials Research Society 1994

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References

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