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The Electronic Structure of Interstitial Iron in Silicon

Published online by Cambridge University Press:  25 February 2011

A Thilderkvist ,
G Grossmann ,
M Kleverman  and
H G Grimmeiss
A Thilderkvist
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-22l 00 Sweden
G Grossmann
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-22l 00 Sweden
M Kleverman
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-22l 00 Sweden
H G Grimmeiss
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-22l 00 Sweden
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Abstract

A donor-like spectrum in Fe-doped silicon has been studied by means of high-resolution Zeeman spectroscopy. Previous work had unambigouosly identified the center as the interstitial iron impurity and the spectrum was interpreted as due to the transitions , where an electron is excited to shallow effective-masslike donor states. In this paper, we can, by studying the transitions in a magnetic field, verify the effective-mass-like character of the loosely bound electron. Furthermore, we also obtain information on the impurity core whose level structure is reflected in the observed superposition of donor-hke Rydeberg series and whose g values determines the Zeeman splitting pattern.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 51
Copyright
Copyright © Materials Research Society 1990

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References

1 Ludwig, G. W. and Woodbury, H. H., Solid State Phys. 13,223 (1962)Google Scholar
2 Zunger, A., Solid State Phys. 39,275 (1987)Google Scholar
3 Olajos, J., Bech Nielsen, B., Kleverman, M., Omling, P., Emanuelsson, P., and Grimmeiss, H.G., Appl. Phys. Lett. 53,2507 (1988)Google Scholar
4 Katayama-Yoshida, H. and Zunger, A., Phys. Rev. B31, 8317 (1985)Google Scholar
5 Haering, R.R., Can. J. Phys. 36,1136 (1958)Google Scholar
6 Pajot, B., Merlet, F., Taravella, G., and Arcas, Ph., Can. J. Phys. 50, 1106 (1972)Google Scholar
7 Pajot, B., Merlet, F., Taravella, G., Can. J. Phys. 50, 2186 (1972)Google Scholar
8 Kleverman, M., Thilderkvist, A., Grossmann, G., and Grimmeiss, H.G. (unpublished)Google Scholar