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Electronic Structure of Deep-Lying Sulfur Centers in Si

Published online by Cambridge University Press:  28 February 2011

H. J. Zeiger  and
W. H. Kleiner
H. J. Zeiger
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–0073
W. H. Kleiner
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–0073
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Abstract

A theoretical analysis has been made of infrared absorption spectra measured earlier for four deep-lying sulfur centers in Si. The data consist of absorption frequencies and polarization selection rules determined for uniaxial stress applied along [001], [111], and [110] axes. Both ls + np transitions and ls → ls transitions are observed. The A and B centers (binding energies 0.1090 eV and 0.1872 eV, respectively) are found to be He-like, while the C and D centers (binding energies 0.3683 eV and 0.6116 eV, respectively) are found to be He+-like. The D center spectra are consistent with Td symmetry, while the A, B and C spectra are consistent in most respects with C3v or D3d symmetry. One noteworthy result is the finding that the ls + np spectral frequencies observed under stress for the A center are consistent with a ls(E) ground state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 519
Copyright
Copyright © Materials Research Society 1985

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References

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