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Electronic Structure of Compensated Dopants in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

L. H. Yang  and
C. Y. Fong
L. H. Yang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
C. Y. Fong
Affiliation:
Department of Physics, University of California, Davis, CA 95616
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Abstract

We use first principles pseudopotential method to study the electronic structures of compensated dopants in a realistic model of hydrogenated amorphous silicon. Boron and phosphorus atoms are treated as dopants. Two states in the gap are identified as the boron-phosphorus pair related states. The lower energy state, strongly localized around the boron atom, is obtained when the atom has a hydrogen atom as a nearest neighbor. The local environment does not affect the localization feature of the state. Other environment around the boron atom cause the charge distribution to be more extended in space. The higher energy state having its charge around the phosphorus atom does not show, strong localization at the phosphorus atom.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 161
Copyright
Copyright © Materials Research Society 1989

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References

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