Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-07-05T21:27:31.781Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic Structure and Optical Properties of ZnGeN2

Published online by Cambridge University Press:  15 February 2011

Sukit Limpijumnong ,
Sergey N. Rashkeev  and
Walter R. L. Lambrecht
Sukit Limpijumnong
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH 44106
Sergey N. Rashkeev
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH 44106
Walter R. L. Lambrecht
Affiliation:
Department of Physics, Case Western Reserve University, Cleveland, OH 44106
Get access

Abstract

The electronic band structure, structural and bonding, and some linear and nonlinear optical properties are calculated for a new ternary nitride compound ZnGeN2 using first-principles methods. Good agreement is obtained with crystallographic data and with absorption data on the band gap. The prospects for use as nonlinear optical material are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.11
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Maunaye, M. and Lang, J., Mater. Res. Bull. 5, 793 (1970).Google Scholar
2. Endo, T., Sato, Y., Takizawa, H., and Shimida, M., J. Mater. Sci. Lett. 11, 424 (1992).Google Scholar
3. Eckerlin, P., Z. anorg. allg. Chem. 5, 225 (1967).Google Scholar
4. Wintenberger, M., Tcheou, F., David, J.,and Lang, J., Z. Naturforsch. 35b, 604 (1980).Google Scholar
5. Limpijumnong, S., Lambrecht, W. R. L., Segall, B., and Kim, K., in III-V Nitrides, ed. Ponce, F. A., Moustakas, T. D., Akasaki, I., and Monemar, B. A., Mat. Res. Soc. Symp. Proc. Vol. 449, (Mater. Res. Soc., Pittsburgh 1997), p. 905.Google Scholar
6. Larson, W. L., Maruska, H. P., and. Stevenson, A., J. Electrochem. Soc. 121, 1674 (1974).Google Scholar
7. Zhu, L. D., Maruska, P. H., Norris, P. E., Yip, P. W., and Bouthilette, L., MRS Internet J. Nitride Semicond. Res. 4S1, G3.8 (1999).Google Scholar
8. Wintenberger, M., Maunaye, M., and Laurent, Y., Mat. Res. Bull. 8, 1049 (1973).Google Scholar
9. Methfessel, M., Phys. Rev. B 38, 1537 (1988).Google Scholar
10. Singh, D. J., Phys. Rev. B 43, 6388 (1991).Google Scholar
11. Kim, K., Lambrecht, W. R. L., Segall, B., and Schilfgaarde, M. van, Phys. Rev. B 56, 7363 (1997).Google Scholar
12. Rashkeev, S. N., Lambrecht, W. R. L., and Segall, B., Phys. Rev. B 57, 3905 (1998).Google Scholar
13. Jones, R. O. and Gunnarsson, O., Rev. Mod. Phys. 61, 689 (1989).Google Scholar
14. Ejder, E., Phys. Status Solidi (a) 6, 442 (1971).Google Scholar