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Electronic Properties of Ultrathin Isoelectronic Intralayers in Semiconductors

Published online by Cambridge University Press:  26 February 2011

K. A. Mäder  and
A. Baldereschi
K. A. Mäder
Affiliation:
Laboratorium für Festkörperphysik, ETH Zürich, 8093 Zürich, Switzerland Institut de Physique Appliquée, EPF Lausanne, 1015 Lausanne, Switzerland
A. Baldereschi
Affiliation:
Institut de Physique Appliquée, EPF Lausanne, 1015 Lausanne, Switzerland IRRMA, PH Ecublens, 1015 Lausanne, and University of Trieste, Italy
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Abstract

An empirical tight-binding Koster-Slater approach is used to determine the electronic properties of ultrathin“quantum wells”in semiconducting host materials of the zincblende or diamond structure. The“quantum well”is viewed as a giant two-dimensional isoelectronic impurity, and treated in a perturbational Green's function approach. We present results on the AlAs/GaAs and on the InP/InAs systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 597
Copyright
Copyright © Materials Research Society 1992

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References

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