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The Electronic Properties of Silicon-Silicide Epitaxial Interfaces

Published online by Cambridge University Press:  26 February 2011

Stefano Ossicini  and
O. Bisi
Stefano Ossicini
Affiliation:
Dipartimento di Fisica della Universitià, Via Campi 213/A 1-41100 Modena
O. Bisi
Affiliation:
Dipartimento di Fisica della Universitià, Via Campi 213/A 1-41100 Modena
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Abstract

The selfconsistent electronic properties of the epitaxial Si(111)-NiSi2 interface are computed for the experimentally observed type-A and type-B growth orientations. The densities of states projected on the various sites provide a detailed analysis of the siliconsilicide interface electronic states. The measured Schottky barrier heights may be interpreted by assuming that deviations from epitaxy must be taken into account.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 315
Copyright
Copyright © Materials Research Society 1988

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References

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