Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-24T01:56:59.111Z Has data issue: false hasContentIssue false
  • English
  • Français

The Electronic Micro Structure in the Implant Layer of Ion Implanted Polymers

Published online by Cambridge University Press:  22 February 2011

R.E. Giedd ,
D. Robey ,
Y.Q. Wang ,
M. G. Moss  and
J. Kaufmann
R.E. Giedd
Affiliation:
Department of Physics and Astronomy, Southwest Missouri State University, Springfield, Mo 65804
D. Robey
Affiliation:
Department of Physics and Astronomy, Southwest Missouri State University, Springfield, Mo 65804
Y.Q. Wang
Affiliation:
Department of Physics and Astronomy, Southwest Missouri State University, Springfield, Mo 65804
M. G. Moss
Affiliation:
Brewer Science Inc., Rolla, Mo 65401
J. Kaufmann
Affiliation:
Brewer Science Inc., Rolla, Mo 65401
Get access

Abstract

The mechanical and electronic properties of ion implanted polymers have been determined to be a function of ion dose, energy and beam current. In previous studies the implant layer was assumed to be isotropic. In an earlier report we speculated that the implant layer was not isotropic, based on a temperature coefficient of resistivity (TCR) that could not be explained by a single structural configuration[1]. In this study we examined the effect of etching the surface layer, decreasing polymer thickness, on the TCR to determine which part of the implant layer contributed to the various mechanisms of conduction. We have concluded that there are at least two mechanisms responsible for conduction, Mott three dimensional variable range hopping(VRH), and Mott one dimensional VRH. It is possible that other theories may be more correct (e.g. crossover to ES-VRH at low temperatures) since many theories predict the same temperature dependence. We found that conduction with the Mott one dimensional VRH exists at the bottom of the implant layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 75
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Wang, Y.Q., Mohite, S.S., Bridwell, L.B., Giedd, R.E., and Sofield, C.J., J. Mater. Res. 8 (2), 388 (1993).Google Scholar
2 Wang, Y.Q., Bridwell, L.B. and Giedd, R.E. in Functional Polymers for Emerging Technologies, edited by Arshady, R., Part Two, Chap. 28, in press.Google Scholar
3 Fink, D., Ibel, K., Goppelt, P., Biersack, J.P., Wang, L., and Behar, M., Nucl. Instrum. and Methods B 46, 342 (1990).Google Scholar
4 Rao, G.R., Wang, Z.L., and Lee, E.H., J. Mater. Res. 8 (4), 927 (1993).Google Scholar
5 Venkatesan, T., Nucl. Instrum. and Methods, B7/8, 461 (1985).Google Scholar
6 Wang, Y.Q., Giedd, R.E., and Bridwell, L.B., Nucl. Instr. Meth. B79, 659 (1993).Google Scholar
7 Dresselhaus, M.S., Wasserman, B., and Wnek, G.E. in Ion Implantation and Ion Beam Processing of Materials, edited by Hubler, G.K., Holland, O.W., Clayton, C.R., and White, C. W. (Mater. Res. Soc. Symp. Proc. 27, Boston, Mass., 1983), p.413.Google Scholar
8 Wang, Y.Q., Bridwell, L.B., Giedd, R.E., and Murphy, M., Nucl. Instrum. and Methods, B 56/57, 660 (1991).Google Scholar
9 Mott, N.F., Philo. Mag., 19, 835 (1969).Google Scholar
10 Mott, N.F. and Davis, E.A., Electronic Processes in Non-Crystalline Materials (Calaren-don Press, Oxford, UK, 1979).Google Scholar
11 Efros, A.L. and Shklovskii, B.I., J. Phys. C 8, 149 (1975).Google Scholar
12 Sheng, P., Abeles, B., and Arie, Y., Phys. Rev. Lett. 31, 44 (1973).Google Scholar
13 Abeles, B., Sheng, P., Coutts, M.D., and Arie, Y., Adv. in Phys., 24, 407 (1975).Google Scholar
14 Wang, Y.Q., Bridwell, L.B., and Giedd, R.E., J. Appl. Phys., 73 (1), 474 (1993).Google Scholar