Hostname: page-component-7c8c6479df-27gpq Total loading time: 0 Render date: 2024-03-19T05:37:57.021Z Has data issue: false hasContentIssue false

Electronic and Ionic Transport Mechanisms of Stoichiometric Lithium Niobate at High-Temperatures

Published online by Cambridge University Press:  14 January 2013

Anke Weidenfelder
Affiliation:
Clausthal University of Technology, Institute of Energy Research and Physical Technologies, Am Stollen 19 b, 38640 Goslar, Germany
Michal Schulz
Affiliation:
Clausthal University of Technology, Institute of Energy Research and Physical Technologies, Am Stollen 19 b, 38640 Goslar, Germany
Peter Fielitz
Affiliation:
Clausthal University of Technology, Institute of Metallurgy, Robert-Koch-Str. 42, 38678 Clausthal-Zellerfeld, Germany
Jianmin Shi
Affiliation:
Braunschweig University of Technology, Institute of Physical and Theoretical Chemistry, Hans-Sommer-Str. 10, 38106 Braunschweig
Günter Borchardt
Affiliation:
Clausthal University of Technology, Institute of Metallurgy, Robert-Koch-Str. 42, 38678 Clausthal-Zellerfeld, Germany
Klaus-Dieter Becker
Affiliation:
Braunschweig University of Technology, Institute of Physical and Theoretical Chemistry, Hans-Sommer-Str. 10, 38106 Braunschweig
Holger Fritze
Affiliation:
Clausthal University of Technology, Institute of Energy Research and Physical Technologies, Am Stollen 19 b, 38640 Goslar, Germany
Get access

Abstract

The electrical and electromechanical properties of lithium niobate single crystals are investigated at high-temperatures. The total electrical conductivity is determined as a function of temperature by impedance spectroscopy for Z-cut crystals with different lithium content. For stoichiometric lithium niobate (sLN) the activation energy is found to be (1.49 ± 0.03) eV in the temperature range from 500 to 900 °C.

Further, the piezoelectric properties (resonance frequency, Q-factor) of X-cut lithium niobate crystals are determined at high temperatures for samples with compositions ranging from congruent to stoichiometric and, subsequently, compared to the conductivity data in order to identify loss contributions.

In this context, the high-temperature stability is examined for X- and Z-cut samples with compositions ranging from congruent to stoichiometric. Series of samples with and without additional alumina protection layers are annealed in air at 900 °C for approximately 50 h. Subsequently, depth profiles are measured by SNMS. In all cases, no lithium loss is observed and, therefore, a high-temperature stability of sLN for at least 50 h at 900 °C can be assumed in ambient air.

Further, the influence of protective layers with different thicknesses and compositions is investigated for X- and Z-cut samples. A lithium loss in the first 300 nm is observed for the Z-cut samples, while the X-cut samples show a behavior dependent on the type of protecting layer.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Damjanovic, D., Curr. Opin. Solid St. M. 3, 469 (1998).10.1016/S1359-0286(98)80009-0CrossRefGoogle Scholar
Ohlendorf, G., Richter, D., Sauerwald, J., and Fritze, H., Diffus. Fundament. 8, 6.1 (2008).Google Scholar
Bordui, P.F., Norwood, R.G., Jundt, D.H., and Fejer, M.M., J. Appl. Phys. 71, 875(1992).10.1063/1.351308CrossRefGoogle Scholar
Iyi, N., Kitamura, K., Izumi, F., Yamamoto, J.K., Hayashi, T., Asano, H. and Kitamura, S., J. Solid State Chem. 101, 340(1992).10.1016/0022-4596(92)90189-3CrossRefGoogle Scholar
Polgar, K., Peter, A., Kovacs, L., Conrradi, G., and Szaller, Z., J. Cryst. Growth 177, 211(1997).10.1016/S0022-0248(96)01098-6CrossRefGoogle Scholar
Donnerberg, H., Phys. Rev. B 40, 11909 (1989).10.1103/PhysRevB.40.11909CrossRefGoogle Scholar
Kovacs, L., Rauschhaupt, G., Polgar, K., Conradi, G. and Wöhlecke, M., Appl. Phys. Lett. 70, 2801 (1997).10.1063/1.119056CrossRefGoogle Scholar
Weidenfelder, A., Fritze, H., Fielitz, P., Borchardt, G., Shi, J., Becker, K.-D., and Ganschow, S., ZPC. 226, 421 (2012).Google Scholar
van Dyke, K.S., Proceedings of the Institute of Radio Engineers 742, (1928).Google Scholar
Butterworth, S., Proc. Phys. Soc 410 (1915).Google Scholar
Ikeda, T., Fundamentals of piezoelectricity, Oxford University Press, (1990).Google Scholar