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Electron Transport in Semiconducting Chiral Carbon Nanotubes

Published online by Cambridge University Press:  01 February 2011

M. Z. Kauser ,
A. Verma  and
P. P. Ruden
M. Z. Kauser
Affiliation:
mzkauser@ece.umn.edu, Univeristy of Minnesota, Electrical and Computer Engineering, 200 Union St. SE., Room 4-174, Minneapolis, MN, 55455, United States, 612-624-8545
A. Verma
Affiliation:
amitv@ece.gatech.edu, Georgia Institute of Technology, Electrical and Computer Engineering, Atlanta, GA, 30332, United States
P. P. Ruden
Affiliation:
ruden@umn.edu, Univeristy of Minnesota, Electrical and Computer Engineering, Minneapolis, MN, 55455, United States
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Abstract

We report on electron transport characteristics for semiconducting, single wall, chiral carbon nanotubes. The Boltzmann transport equation is solved indirectly by the Ensemble Monte Carlo method. The basis for the transport calculations is provided by electronic structure calculations within the framework of a simple tight binding model. Scattering mechanisms considered are due to the electron-phonon interactions involving longitudinal acoustic, longitudinal optic, and radial breathing mode phonons. Results show significantly increased Umklapp scattering processes due to the reduced Brillouin zone compared to zigzag nanotubes. This results in increased transient velocity oscillation and negative differential mobility.

Keywords

simulationsemiconductingnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 922: Symposium U – Organic and Inorganic Nanotubes – From Molecular to Submicron Structures , 2006 , 0922-U07-50
Copyright
Copyright © Materials Research Society 2006

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