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Electron Transport in Highly Textured Metal Films Grown by Partially Ionized Beam Deposition

  • S. R. Soss (a1), B. Gittleman (a1), K. E. Mello (a1), T.-M. Lu (a1) and S. L. Lee (a2)...

Abstract

In principle, the resistivity of bulk FCC cubic materials should not depend on the orientation due to the fact that the conductivity tensor is single valued. However, we show that this conclusion is not valid for thin films. Deposition of highly oriented Al, Ag, and Cu films on amorphous substrates using the partially ionized beam (PIB) technique exhibit a resistivity which is strongly correlated with the texture, i.e., the tighter the texture, the lower the film resistivity. We model the film as an array of grains whose grain boundaries can be considered as delta function potentials for electron scattering and the strength of the potentials can be calculated from the measured resistivity of the films. On the other hand, the fiber texture distribution of the the films is obtained from X-ray pole figure measurements, and Monte-Carlo simulations are then performed using this data to determine the average dislocation density at the grain boundaries due to the grain to grain crystallographic mismatch. We show that the transmittance coefficient for electron scattering, and therefore the film resistivity, is a monotonically increasing function of the average dislocation density. We therefore conclude that the structure of grain boundaries in a thin film provides the necessary mechanism by which the resistivity of an FCC cubic metal can depend on the texture.

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[1] Fuchs, K.. Proceedings of the Cambridge Philisophical Society, 34:100, 1938.
[2] Sondheimer, E.H.. Advances in Physics, 1(1):1, 1952.
[3] Mayadas, A.F. and Shatzkes, M.. Electrical-resistivity model for polycrystalline films: the case of arbitrary reflection at external surfaces. Physical Review B, 1(4):1382, February 1940.
[4] Tellier, C.R., Pichard, C.R., and Tosser, A.J.. Statistical model of electrical conduction in polycrystalline metals. Thin Solid Films, 61:349, February 1979.
[5] Pichard, C.R., Tellier, C.R., and Tosser, A.J.. A three-dimensional model for grain boundary resistivity in metal films. Thin Solid Films, 62:189, March 1979.
[6] Mei, S.-N. and Lu, T.-M.. Journal of Vacuum Science and Technology A, 6:9, 1988.
[7] Soss, S.R., Cook, C.A., and Lu, T.-M.. Partially ionized beam deposition of Ag films on insulating substrates. Journal of Applied Physics, 77(6):2735, March 1995.
[8] Bai, P.. Effects of Low Energy Ion Bombardment on the Growth of Cu films. PhD thesis, Rensselaer Polytechnic Institute, Troy, NY, February 1991.
[9] Gittleman, B.D.. The Effects of Low Energy Ion Bombardment on the Growth of Thin Films: Model and Experiment. PhD thesis, Rensselaer Polytechnic Institute, Troy, NY, February 1995.
[10] Yapsir, A.S.. Ion Implantation Effects on the Metal-Semiconductor Interfaces. PhD thesis, Rensselaer Polytechnic Institute, Troy, NY, December 1988.

Electron Transport in Highly Textured Metal Films Grown by Partially Ionized Beam Deposition

  • S. R. Soss (a1), B. Gittleman (a1), K. E. Mello (a1), T.-M. Lu (a1) and S. L. Lee (a2)...

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