Hostname: page-component-7479d7b7d-k7p5g Total loading time: 0 Render date: 2024-07-10T20:30:17.393Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Spin Resonance Evidence for a Localized EP (E’δ-Like) Defect Structure

Published online by Cambridge University Press:  26 February 2011

John F Conley Jr.  and
PM Lenahan
John F Conley Jr.
Affiliation:
The Pennsylvania State University, Department of Engineering Science and Mechanics, University Park, PA 16802
PM Lenahan
Affiliation:
The Pennsylvania State University, Department of Engineering Science and Mechanics, University Park, PA 16802
Get access

Abstract

We report the first observation of a hydrogen complexed EP (E’δ) center. Comparing EP/H and E’γ/H electron spin resonance spectra, we provide the first strong evidence that EP (E’δ) centers do not have a delocalized structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 377
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Shaneyfelt, M.R. Schwank, J.R., Fleetwood, D.M., Winokur, P.S., Hughes, H.L., and Sexton, F.W., IEEE Trans. Nuc. Sci. 37, 1632 (1990).Google Scholar
2. Kohler, R.A., Kushner, R.A., and Lee, K.H., IEEE Trans. Nuc. Sci. 35, 1492 (1988).Google Scholar
3. Lenahan, P.M. and Dressendorfer, P.V., IEEE Trans. Nuc. Sci. 30, 4602 (1983), J. Appl. Phys. 55, 3495 (1984).Google Scholar
4. Lipkin, L., Rowan, L., Reisman, A., and Williams, C.K., J. Electrochem. Soc. 138, 2050 (1991).Google Scholar
5. Takahashi, T., Triplett, B.B., Yokogawa, K., and Sugano, T., Appl. Phys. Lett. 51, 1334 (1987).Google Scholar
6. Conley, J.F. and Lenahan, P.M., Appl. Phys. Lett. 62, 40 (1993).Google Scholar
7. Conley, J.F. and Lenahan, P.M., Microelec. Engr. 22, 215 (1993).Google Scholar
8. Conley, J.F. Jr., and Lenahan, P.M., IEEE Trans. Nuc. Sci. 40, 1335 (1993).Google Scholar
9. Conley, J.F. Jr. Lenahan, P.M., Evans, H.L., Lowry, R.K., and Morthorst, T.J., J. Appl. Phys. 76, 2872 (1994).Google Scholar
10. Vanheusden, K. and Stesmans, A., J. Appl. Phys. 74, 275 (1993).Google Scholar
11. Warren, W.L., Shaneyfelt, M.R., Schwank, J.R., Fleetwood, D.M., Winokur, P.S., Devine, R.A.B., Maszara, W.P., and McKitterick, J.B., IEEE Trans. Nuc. Sci. 40, 1755 (1993).Google Scholar
12. Warren, W.L., Shaneyfelt, M.R., Fleetwood, D.M., Schwank, J.R., and Winokur, P.S., IEEE Trans. Nuc. Sci. 41, 1817 (1994).Google Scholar
13. Griscom, D.L. and Friebele, E.J., Phys. Rev. B. 34, 7524 (1986).Google Scholar
14. Conley, J.F. Jr. Lenahan, P.M., and Roitman, P., proceedings INFOS ’91, p. 259 (1991).Google Scholar
15. Conley, J.F. Jr., Lenahan, P.M., Evans, H.L., Lowry, R.K., and Morthorst, T.J., in Materials Reliability in Microelectronics IV, Vol. 138, 1994 MRS Spring Meeting Proc, pp. 37–42 (1994).Google Scholar
16. Vitko, J., J. Appl. Phys. 49, 5530 (1978).Google Scholar
17. Tsai, T.E. and Griscom, D.L., J. Noncryst. Sol. 91, 170 (1987).Google Scholar