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Electron position: jumping in double concentric quantum rings

Published online by Cambridge University Press:  07 July 2011

I. Filikhin ,
S. Matinyan ,
J. Nimmo  and
B. Vlahovic
I. Filikhin
Affiliation:
North Carolina Central University, Durham, NC, 27707, U.S.A.
S. Matinyan
Affiliation:
North Carolina Central University, Durham, NC, 27707, U.S.A.
J. Nimmo
Affiliation:
North Carolina Central University, Durham, NC, 27707, U.S.A.
B. Vlahovic
Affiliation:
North Carolina Central University, Durham, NC, 27707, U.S.A.
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Abstract

Semiconductor heterostructures as quantum dots or quantum rings (QR) demonstrate discrete atom-like energy level structure. In an atom the position of an electron can be changed by electromagnetic field influence with accompaniment of quantum number change. In present work we show that in the weak coupled Double Concentric Quantum Ring (DCQR), the electron jumping is possible due to tunneling accompanied with level anti-crossing which has a place in a magnetic field. We study DCQR composed of GaAs in an Al0.70Ga0.30As substrate under influence of a magnetic field. In our model the DCQR is considered within three dimensional single sub-band effective mass approach. When a magnetic field is applied in the z direction, perpendicular to the DCQR plane. The results of the numerical calculations for DCQR are presented for DCQRs of different geometry.

Keywords

magnetic propertiesnanostructuresemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1370: Symposium YY – Computational Semiconductor Materials Science , 2011 , mrss11-1370-yy08-13
Copyright
Copyright © Materials Research Society 2011

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References

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