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Electron Mobility In N-Type Epitaxial ZnSe

Published online by Cambridge University Press:  25 February 2011

M. Vaziri  and
R. Reifenberger
M. Vaziri
Affiliation:
University of Michigan - Flint; Department of Physics and Engineering; Flint MI 48502;, U.S.A.
R. Reifenberger
Affiliation:
Purdue University; Department of Physics; W. Lafayette, IN 47907;, U.S.A.
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Abstract

An analysis of the temperature dependent mobility in lightly doped ZnSe epitaxial layers grown on a semi-insulating GaAs substrate by Molecular Beam Epitaxy is reported. Our results indicate that the temperature dependence of the mobility is in poor agreement with calculated values based on typical phonon and ionized impurity scattering mechanisms. Good agreement between theory and experimental data call be obtained by including a scattering term associated with the space-charge region surrounding defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 421
Copyright
Copyright © Materials Research Society 1991

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References

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