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Electron Microscopy of Semiconductors Reconstructed Surfaces

Published online by Cambridge University Press:  21 February 2011

Pierre M. Petroff
Pierre M. Petroff*
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974 USA
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Abstract

Surface sensitive transmission electron microscopy (SSTEM) and reflection electron microscopy (REM) have been used to analyze the Si (111) 1×1 → 7×7 surface reconstruction. The SSTEM and transmission electron diffraction results for the Si (111) 7×7 surface are interpreted using several possible “surface dislocation” models. The SSTEM and REM techniques have also been applied to the GaAs (100) MBE deposited surfaces. The rough surface topography for the c(4×4) reconstructed surface is attributed to surface steps motions and bunching upon interruption of the MBE deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 31: Symposium N – Electron Microscopy of Materials , 1983 , 117
Copyright
Copyright © Materials Research Society 2006

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