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Electron Microscopic Studies of Co- and Ti-Germanosilicide Films Formed on SiGe Layers

Published online by Cambridge University Press:  10 February 2011

S. Jin ,
R. A. Donaton ,
H. Bender  and
K. Maex
S. Jin
Affiliation:
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium, sing@imec.be
R. A. Donaton
Affiliation:
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium, sing@imec.be
H. Bender
Affiliation:
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium, sing@imec.be
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001, Leuven, Belgium, sing@imec.be INSYS, Katholieke Universiteit Leuven, B-3001 Leuven, Belgium
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Abstract

Cobalt films are sputter deposited on Si0.8Ge0.2 layers grown epitaxially on Si substrates. Compared with the silicidation on pure silicon, there is a retardation of the disilicide formation in the SiGe case. The conversion of the monosilicide into the disilicide strongly depends on the thickness of the initial SiGe layers. For the silicidation of titanium on poly-SiGe layers, the increase of the Ge content favours the nucleation of C54 titanium germanosilicide, hence helping the transition from the C49 to the C54 phase on the blanket layers. The thickness of the final C54 Ti-germanosilicide layers formed on narrow poly-Sil-×Gex runners is independent of the line width and the Ge concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 523: Symposium U – Electron Microscopy of Semiconducting Materials & ULSI Devices , 1998 , 133
Copyright
Copyright © Materials Research Society 1998

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